Does Occupational Exposure of Shahid Dastghieb International Airport Workers to Radiofrequency Radiation Affect Their Short Term Memory and Reaction Time?

نویسندگان

  • S. Jarideh
  • S. Taeb
  • S. M. Pishva
  • M. Haghani
  • S. Sina
  • S. A. R. Mortazavi
  • M. A. Hosseini
  • S. Nematollahi
  • N. Shokrpour
  • M. Hassan Shahi
  • S. M. J. Mortazavi
چکیده

BACKGROUND Airport workers are continuously exposed to different levels of radiofrequency microwave (RF/MW) radiation emitted by radar equipments. Radars are extensively used in military and aviation industries. Over the past several years, our lab has focused on the health effects of exposure to different sources of electromagnetic fields such as cellular phones, mobile base stations, mobile phone jammers, laptop computers, radars, dentistry cavitrons and MRI. The main goal of this study was to investigate if occupational exposure of Shahid Dastghieb international airport workers to radiofrequency radiation affects their short term memory and reaction time. METHODS Thirty two airport workers involved in duties at control and approach tower (21 males and 11 females), with the age range of 27-67 years old (mean age of 37.38), participated voluntary in this study. On the other hand, 29 workers (13 males, and 16 females) whose offices were in the city with no exposure history to radar systems were also participated in this study as the control group. The employees' reaction time and short term memory were analyzed using a standard visual reaction time (VRT) test software and the modified Wechsler memory scale test, respectively. RESULTS The mean± SD values for the reaction times of the airport employees (N=32) and the control group (N=29) were 0.45±0.12 sec and 0.46±0.17 sec, respectively.  Moreover, in the four subset tests; i.e. paired words, forward digit span, backward digit span and word recognition, the following points were obtained for the airport employees and the control group, respectively: (i) pair words test: 28.00±13.13 and 32.07±11.65, (ii) forward digit span: 8.38±1.40 and 9.03±1.32, (iii) backward digit span: 5.54±1.87 and 6.31±1.46, and (iv) word recognition: 5.73±2.36 and 6.50±1.93. These differences were not statistically significant. CONCLUSION The occupational exposure of the employees to the RF radiation in Shahid Dastghieb international airport does not have any significant detrimental effect on their reaction time as well as short term memory.

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عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015